ds23011 rev. f-2 1 of 2 MBR1630-mbr1660 www.diodes.com diodes incorporated MBR1630 - mbr1660 16a schottky barrier rectifier features l m a n p d e k c b j g r pin 1 + pin 1 pin 2 pin2- case + to-220ac dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e 6.35 g 12.70 14.73 j 0.51 1.14 k 3.53 4.09 l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 r 4.83 5.33 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: plated leads solderable per mil-std-202, method 208 polarity: see diagram weight: 2.24 grams (approx.) mounting position: any marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbr 1630 mbr 1635 mbr 1640 mbr 1645 mbr 1650 mbr 1660 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current (note 1) @ t c = 125 c i o 16 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a forward voltage drop @ i f =16a, t c = 25 c @i f =16a, t c = 125 c v fm 0.63 0.57 0.75 0.65 v peak reverse current @t c = 25 c at rated dc blocking voltage @ t c = 125 c i rm 0.2 40 1.0 50 ma typical junction capacitance (note 2) c j 450 pf typical thermal resistance junction to case (note 1) r jc 1.5 3 c/w voltage rate of change (rated v r ) dv/dt 1000 10,000 v/ s operating and storage temperature range t j, t stg -65 to +150 c notes: 1.thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc.
ds23011 rev. f-2 2 of 2 MBR1630-mbr1660 www.diodes.com 0.1 1.0 10 5 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous fwd current (a) f v , instantaneous forward voltage (v) f fi g .2 t y pical forward volta g e characteristics MBR1630 - mbr1645 mbr1650 / mbr1660 0 50 100 150 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive surge current 100 1000 4 000 0.1 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) r fi g . 5 t y pical junction capacitance t= 25 c j f = 1.0mhz 0.01 0.1 1.0 10 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 4 t y pical reverse characteristics t = 125 c j t = 75 c j t = 25 c j 100 0 4 8 0 50 100 150 i , average forward current (a) (av) t , case temperature ( c) c fig. 1 forward current derating curve 12 16 20
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